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TYPICAL PERFORMANCE CURVES
APT40GF120JRDQ2 1200V
APT40GF120JRDQ2
FAST IGBT & FRED
The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an Microsemi free wheeling Ultra Fast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. * Low Forward Voltage Drop * RBSOA and SCSOA Rated * High Freq. Switching to 20KHz * Ultra Low Leakage Current
E G C
E
S
OT
22
7
ISOTOP (R)
"UL Recognized"
file # E145592
* Ultrafast Soft Recovery Anti-parallel Diode * Intergrated Gate Resistor: Low EMI, High Reliability
C G E
MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 100C Pulsed Collector Current
1
All Ratings: TC = 25C unless otherwise specified.
APT40GF120JRDQ2 UNIT Volts
1200 30 80 42 150 150A @ 1200V 347 -55 to 150
Amps
Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range
Watts C
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 500A) Gate Threshold Voltage (VCE = VGE, I C = 700A, Tj = 25C) MIN TYP MAX Units
1200 4.5 5.5 2.5 3.1 200
2 2
6.5 3.0
Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 125C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25C)
Volts
I CES I GES RG(int)
A nA
5-2006 052-6285 Rev B
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V) Intergrated Gate Resistor
1500
100
5
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) td(off) tf Eon1 Eon2 td(on) tr td(off) tf Eon1 Eon2 Eoff Eoff tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT40GF120JRDQ2
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VCE = 600V I C = 50A TJ = 150C, R G = 1.0, VGE = 15V, L = 100H,VCE = 1200V Inductive Switching (25C) VCC = 800V VGE = 15V I C = 50A
7
MIN
TYP
MAX
UNIT pF V nC
3460 385 225 9.5 340 30 205 150 25 43 260 70 3600 4675 2640 25 43 300 95 3750 6400 3400 J
ns ns A
VGE = 15V
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy
44 55 4 5
RG = 1.0 7 TJ = +25C
Turn-on Switching Energy (WithDiode)
6
J
Inductive Switching (125C) VCC = 800V VGE = 15V I C = 50A
Turn-on Switching Energy (WithDiode)
6
TJ = +125C
RG = 1.0 7
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJC VIsolation WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) RMS Voltage (50-60Hz Sinusoidal Package Weight
Waveform from Terminals to Mounting Base for 1 Min.)
MIN
TYP
MAX
UNIT C/W Volts
0.36 1.1 2500 1.03 29.2 10 1.1
oz gm Ib*in N*m
Torque
Maximum Terminal & Mounting Torque
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and diode leakages
5-2006 Rev B 052-6285
3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452) Mircosemi Reserves the right to change, without notice, the specifications and information contained herein.
TYPICAL PERFORMANCE CURVES
160 140 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 120 100 80 60 40 20 0 0 1 2 3 4 5 6 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
V
GE
= 15V
180 160 140 120 100 80 60 40 20 0
APT40GF120JRDQ2
15V 13V 12V
TJ = 25C TJ = -55C TJ = 125C
11V
10V
9V 8V
160 140 120 100
FIGURE 1, Output Characteristics(TJ = 25C) VGE, GATE-TO-EMITTER VOLTAGE (V)
16 14 12 10
FIGURE 2, Output Characteristics (TJ = 125C)
I = 50A C T = 25C
J
0 5 10 15 20 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
VCE = 240V VCE = 600V
IC, COLLECTOR CURRENT (A)
80 60 40 20 0 0
8 6 4 2 0 0 50
VCE = 960V
TJ = -55C TJ = 25C TJ = 125C
2 4 6 8 10 12 14 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
100 150 200 250 300 350 400 GATE CHARGE (nC) FIGURE 4, Gate Charge
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
4
IC = 100A
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
5
5
4
IC = 100A
3
IC = 50A IC = 25A
3
IC = 50A IC = 25A
2
2
1
1
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.15
0
8
25 50 75 100 125 150 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 120
0
0
IC, DC COLLECTOR CURRENT(A)
VGS(TH), THRESHOLD VOLTAGE
1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Threshold Voltage vs. Junction Temperature
100 80 60 40 20 0 -50
(NORMALIZED)
052-6285
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature
Rev B
5-2006
35
td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns)
350 300 250 200 150 100 50 0
VCE = 800V RG = 1.0 L = 100H
APT40GF120JRDQ2
30 25 20 15 10 5 0
VGE = 15V
VGE =15V,TJ=125C VGE =15V,TJ=25C
VCE = 800V TJ = 25C or 125C RG = 1.0 L = 100H
110 90 70 50 30 10 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 140 120 100 80 60 40 20 110 90 70 50 30 10 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 25
EON2, TURN ON ENERGY LOSS (mJ) EOFF, TURN OFF ENERGY LOSS (mJ)
= 800V V CE = +15V V GE R = 1.0
G
110 90 70 50 30 10 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current
120 100
tf, FALL TIME (ns)
RG = 1.0, L = 100H, VCE = 800V
RG = 1.0, L = 100H, VCE = 800V
TJ = 25 or 125C,VGE = 15V
tr, RISE TIME (ns)
80 60 40 20 0
TJ = 125C, VGE = 15V
TJ = 25C, VGE = 15V
0
110 90 70 50 30 10 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current
7 6 5 4 3 2 1
TJ = 25C
= 800V V CE = +15V V GE R = 1.0
G
20
TJ = 125C
TJ = 125C
15
10
5
TJ = 25C
110 90 70 50 30 10 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current
SWITCHING ENERGY LOSSES (mJ)
0
110 90 70 50 30 10 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current
25
SWITCHING ENERGY LOSSES (mJ)
= 800V V CE = +15V V GE R = 1.0
G
0
35 30 25 20 15 10 5 0 0
= 800V V CE = +15V V GE T = 125C
J
Eon2,100A
Eon2,100A
20
15
10
Eoff,100A Eoff,50A
5-2006
Eoff,100A Eoff,50A Eoff,25A
Eon2,50A Eon2,25A
5
Eon2,50A Eon2,25A Eoff,25A
Rev B
052-6285
20 15 10 5 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
125 100 75 50 25 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature 0
0
TYPICAL PERFORMANCE CURVES
6,000 Cies IC, COLLECTOR CURRENT (A)
160 140 120 100 80 60 40 20
APT40GF120JRDQ2
C, CAPACITANCE ( F)
P
1,000 500 Coes Cres 100
0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage
0 200 400 600 800 1000 1200 1400 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area
0
0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 10-5 0.3 0.7 D = 0.9
ZJC, THERMAL IMPEDANCE (C/W)
0.5
Note:
PDM
t1 t2
0.1 0.05 10-4
SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
80 FMAX, OPERATING FREQUENCY (kHz)
T = 75C
TJ (C)
0.120 Dissipated Power (Watts) 0.0158 0.319
TC (C)
0.241
10 5
C
ZEXT
= min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf
max
F
T = 100C
C
ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
20 30 40 50 60 70 80 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
1
T = 125C J D = 50 % V = 800V CE R = 1.0
G
fmax2 = Pdiss =
Pdiss - Pcond Eon2 + Eoff TJ - TC RJC
10
052-6285
Rev B
5-2006
APT40GF120JRDQ2
APT2X31DQ120
10%
Gate Voltage
TJ = 125C
td(on)
V CC
IC
V CE
tr 90%
Collector Current
5%
10%
A D.U.T.
Switching Energy
Collector Voltage
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
90%
Gate Voltage
td(off)
TJ = 125C
90% tf 10%
Collector Voltage
0
Collector Current
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
052-6285
Rev B
5-2006
TYPICAL PERFORMANCE CURVES
APT40GF120JRDQ2
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol IF(AV) IF(RMS) IFSM Symbol VF Characteristic / Test Conditions Maximum Average Forward Current (TC = 89C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) Characteristic / Test Conditions IF = 50A Forward Voltage IF = 100A IF = 50A, TJ = 125C MIN
All Ratings: TC = 25C unless otherwise specified.
APT40GF120JRDQ2 UNIT Amps
30 39 210
TYP MAX UNIT Volts
STATIC ELECTRICAL CHARACTERISTICS 3.06 3.82 2.25
MIN TYP MAX UNIT ns nC
DYNAMIC CHARACTERISTICS
Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Test Conditions Reverse Recovery Time I = 1A, di /dt = -100A/s, V = 30V, T = 25C F F R J Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current
1.20 ZJC, THERMAL IMPEDANCE (C/W) 1.00 0.80 0.60 0.40 0.20 0 D = 0.9
25 300 360 4 380 1700 8 160 2550 28 -
IF = 30A, diF/dt = -200A/s VR = 800V, TC = 25C
-
Amps ns nC Amps ns nC Amps
IF = 30A, diF/dt = -200A/s VR = 800V, TC = 125C
IF = 30A, diF/dt = -1000A/s VR = 800V, TC = 125C
0.7
0.5 0.3 0.1 0.05 10-5 10-4
Note:
PDM
t1 t2
SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
0.00306
0.0463
0.267
FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL
052-6285
ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
Rev B
Dissipated Power (Watts)
ZEXT
0.291
0.468
0.341
5-2006
TJ (C)
TC (C)
100 trr, REVERSE RECOVERY TIME (ns) 90 IF, FORWARD CURRENT (A) 80 70 60 50 40 30 20 10 0 0 TJ = 125C TJ = -55C TJ = 175C TJ = 25C
450 400 350 300 250 200 150 100 50 30A 60A
APT40GF120JRDQ2
T = 125C J V = 800V
R
15A
1 2 3 4 5 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 25. Forward Current vs. Forward Voltage
T = 125C J V = 800V
R
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 26. Reverse Recovery Time vs. Current Rate of Change IRRM, REVERSE RECOVERY CURRENT (A) 30 25 20 15 10
T = 125C J V = 800V
R
0
4000 Qrr, REVERSE RECOVERY CHARGE (nC) 3500 3000 2500 2000 1500 1000 500 0
60A
60A
30A
30A
15A
15A
5 0
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 27. Reverse Recovery Charge vs. Current Rate of Change 1.2 Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s) 1.0 trr 0.8 0.6 0.4 0.2 0.0 trr Qrr
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 28. Reverse Recovery Current vs. Current Rate of Change 45 40 35 30 IF(AV) (A) 25 20 15 10 5
Duty cycle = 0.5 T = 175C
J
IRRM
Qrr
25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 29. Dynamic Parameters vs. Junction Temperature
200 CJ, JUNCTION CAPACITANCE (pF)
0
75 100 125 150 175 Case Temperature (C) Figure 30. Maximum Average Forward Current vs. CaseTemperature
0
25
50
150
100
5-2006
50
Rev B
052-6285
10 100 200 VR, REVERSE VOLTAGE (V) Figure 31. Junction Capacitance vs. Reverse Voltage
0
1
TYPICAL PERFORMANCE CURVES
+18V 0V diF /dt Adjust
Vr
APT10035LLL
APT40GF120JRDQ2
D.U.T. 30H
trr/Qrr Waveform
PEARSON 2878 CURRENT TRANSFORMER
Figure 32. Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
5 3 2
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr.
0.25 IRRM
5
Figure 33, Diode Reverse Recovery Waveform and Definitions
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
1.95 (.077) 2.14 (.084)
5-2006 052-6285 Rev B
* Emitter/Anode
Collector/Cathode
* Emitter/Anode terminals are shorted internally. Current handling capability is equal for either Emitter/Anode terminal.
* Emitter/Anode Dimensions in Millimeters and (Inches)
Gate
ISOTOP(R) is a registered trademark of ST Microelectronics NV. Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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